Comparison of Effects of Pulsed Ruby Laser and Pulsed Electron Beam Annealing of exp 75 As exp + Implanted Silicon

摘要

Ion-backscattering, ion-channeling, and transmission electron microscopy (TEM) were used to study a series of ion implanted silicon samples that were annealed with either a pulsed laser or a pulsed electron beam. Single crystal ((001) orientation) silicon samples were implanted with either 35 or 100 keV exp 75 As exp + to a dose of approx. 1 x 10 exp 16 As/cm exp 2 and subsequently annealed with either a Q-switched pulsed Ruby laser or the electron beam generator. A series of energy densities was used in both cases to optimize results. It was determined from backscattering that the as-implanted profiles were redistributed in essentially the same manner for both types of anneals, indicating that melting and rapid recrystallization has occurred. For the 35 keV exp 75 As exp + implanted samples the two techniques produced equivalent anneals with no remaining damage as indicated by channeling and TEM. However, for the 100 keV implants the anneal was not uniform across the sample in the electron beam case and the channeling minimum yields for the major axes ((110), (111), and (100)) were higher than the laser annealed results. In both cases, the As substitutionality (97 to 99%) and minimum yields are better than results obtained from conventional thermal annealing. (ERA citation 04:030788)