Effects of Neutron Irradiation and X-Ray Bombardment on Actively Biased Si Avalanche Photodiodes

摘要

The results of a study of the effects of both neutron and X-ray irradiation on Si APD's biased to M greater than or equal to 100 during irradiation are presented. The results indicate that neutron irradiation of actively biased APD's is beneficial as long as the fluence for a negative temperature coefficient is not reached. Further, by selection of an APD with sufficient internal series resistance, the device can survive gamma 's of significant magnitude at practical M values without the necessity of a large external current limiting resistor. Although large numbers of APD's from a wide variety of manufacturers were not examined, the results presented in this study are encouraging enough to warrant serious consideration and testing of APD's by designers of fiber-optic data links which must tolerate exposure to radiation environments. (ERA citation 04:006478)