Theoretical and experimental investigation of heating of biased Si avalanche photodiodes in an external circuit due to irradiation by a millisecond-pulse laser

摘要

The interaction mechanism between external laser and Si avalanche photodiodes (Si-APDs) in practical circuits and the law of temperature increase are vital for the laser protection of Si-APDs. This study establishes the heating model of Si-APDs in an external circuit irradiated by a millisecond-pulse laser. The law of surface temperature increase in Si-APDs is determined via simulation and experiment. Results show that both laser energy density and external capacitance significantly affect the temperature increase. The theoretical simulation and experimental results are consistent, thereby validating the theoretical model. (C) 2020 Optical Society of America