Preparation and Characterization of Hydrogenated Amorphous Silicon Thin Films and Thin Film Solar Cells Produced by Ion Plating Techniques. Third Quarterly Progress Report, July 1-September 30, 1979

摘要

Using quartz, sapphire and stainless steel substrates, hydrogenated a-Si films have been prepared by ion-plating techniques through a 1000 to 2000 volt hydrogen glow. The highest hydrogen content to date has been 18 a/o in a film evaporated in partial pressure of 55 mu of hydrogen. Optical band gaps of these films varied from 1.67 eV to 2.21 eV. Films made on sapphire substrates were used in IR-spectroscopy measurement; they had a doublet absorption peak at approximately 2000 cm exp -1 corresponding to SiH bond stretching. (ERA citation 05:015138)