Diagnostics of a Glow Discharge Used to Produce Amorphous Silicon Films. Technical Progress Report, August 15, 1980-November 14, 1980

摘要

Construction of the basic apparatus has been completed during this period, and many apparatus checks have been completed. Almost complete SiH sub 4 dissociation has been obtained in approx. 950 C ovens between the turbo and rough pumps, so that reliable, long-term operation is achieved. A base vacuum of approx. 10 exp -7 Torr is achieved in the discharge chamber in a few hours, and approx. 10 exp -8 overnight, so that gas-phase impurity levels as low as 10 exp -7 are ready achievable. The SiH sub 4 inlet lines are entirely bakeable stainless steel and permanently closed to air, to maintain the tank purity of SiH sub 4 . A distillation procedure to further clean the tank SiH sub 4 is under study. Thus we should be able to study the effects of very small, controlled levels of impurities. The discharge configurations are shown, and the ratios of Si/sub x/H/sub n/ exp + fluxes for three types of discharges in pure SiH sub 4 are given. (ERA citation 06:012179)