Photovoltaic and Structural Properties of a-Si:H Thin Films. Quarterly Technical Progress Report No. 1, June 1-August 31, 1980

摘要

Three papers are presented. The first reports work on the characterization and analysis of a series of samples prepared by rf-sputtering under a wide range of H sub 2 partial pressures and Ar+H sub 2 total gas pressures. The study demonstrates the relations between a-Si:H film microstructure, film composition, film properties, and sputtering parameters. The second paper reports the use of a computerized energy compensated time-of-flight atom probe to obtain the average composition of two widely differing hydrogenated amorphous silicon rf-sputtered films deposited on W field emitter tips. The third paper finds that palladium/amorphous silicon Schottky barrier diodes exhibit superlinear dark forward current-voltage characteristics over the temperature range from 30 to 130 exp 0 C. The results are found to be consistent with expected behavior for space-charge-limited current in the presence of distributed traps. The trap parameters are deduced from the I-V data. (ERA citation 07:003671)