Ion-Beam-Induced Changes in Alloy Composition (Ni-Si; Cu-Ni)

摘要

Non-equilibrium, radioinduced segregation (RIS) occurs in ion implantation, RIS studies in Ni-Si alloys show that heavy ions are much less efficient than light ions at producing long-range migrating defects. Defect diffusion can be very large at elevated temperature can produce changes to depths beyond the ion range, particularly in Cu-Ni alloys. (ERA citation 08:036270)