Comparison of Thermal, Line-Source Electron Beam and CW Laser Annealing for the Fabrication of ErSi sub 2 Schottky Barrier on Si

摘要

ErSi sub 2 contacts formed by reacting Er with single crystal silicon using conventional furnace heat treatment are dominated by pits. Recently rapid electron and laser beam heating have been used to form pit-free ErSi sub 2 layers on Si by reacting Er with the Si substrate. For this investigation we studied the electrical properties of erbium silicide/Si contact prepared by thermal, laser and electron beam annealing. We prepared and annealed three types of samples; (I) Er(600A)/Si and (III) Si(900A)/Er(600A)/Si. The barrier height of the pit-free thermal annealed samples (type III) was approx. 0.78 eV. All laser and e-beam annealed samples were observed to be pit free. The barrier heights for the laser annealed samples varied from approx. 0.63 eV for type I samples to approx. 0.77 eV for type III samples. The eV (type I and II) and approx. 0.77 eV for type III. The barrier heights of beam processed diodes shifted towards the 0.78 eV range upon post-annealing. We model these results in terms of defects created at the ErSi sub 2 -Si interface. (ERA citation 09:005149)