Hydrogen Passivation of Active Defects in Polycrystalline Silicon Solar Cells. Example of RAD Ribbons

摘要

This paper is intended to give an outlook of the hydrogen passivation of active defects in polycrystalline silicon using the example of solar cells made from RAD ribbons. The structural defects in these materials, the concept of hydrogen passivation and its implementations are discussed first; the emphasis is made on the incorporation of hydrogen by an implantation technique using a Kaufman-type ion source. Then, tentative explanations of the improvement and of the stability of the characteristics of uncoated solar cells following the hydrogenation are proposed. The stable and unstable parts of this improvement are ascribed to the formation of energetic Si-H bonds at extended defects and a modification of the surface optical properties respectively. It is concluded that hydrogen passivation may be one of the necessary approaches to improve the conversion efficiency of ribbon solar cells. 57 references are given. (ERA citation 11:015869)