GaP/Al/sub X/Ga/sub 1-X/P Heterojunction Semiconductor Controlled Rectifier for High-Temperature Electronic Applications

摘要

Useful, three-terminal, solid-state switching action over the temperature range from 23 to 550 exp 0 C has been demonstrated for mesa-isolated, liquid-phase epitaxial, n exp + n exp + pn exp - p exp + , GaP/Al/sub 0.35/Ga/sub 0.65/P/GaP/GaP/GaP, heterojunction, semiconductor controlled rectifier (HSCR) structures. This is the highest temperature at which solid-sate p-n-p-n switching action has ever been demonstrated in any material system. Some bistable switching was observed to temperature as high as 580 exp 0 C. These results provide evidence that the GaP/AlGaP heterojunction system is an excellent technology for electronic components operated at high temperature. (ERA citation 10:052125)