Application of the sup 16 O(d, alpha ) sup 14 N Nuclear Reaction to Oxygen Depth Profiling in SIMOX Structures

摘要

The high depth resolution sup 16 O(d, alpha ) sup 14 N nuclear reaction is used to profile oxygen in SIMOX structures formed after high dose (from 1 x 10 sup 18 to 3 x 10 sup 18 cm sup -2 ) implantation of oxygen into silicon at an energy of 200 keV. As the thickness of the buried silicon dioxide layers is large, the sup 16 O(d,P sub 0 ) peak interferes with the sup 16 O(d, alpha ) energy spectrum. The observation of the sup 16 O(d,p sub 1 ) peak allows to deduce the expected P sub 0 peak which is then deducted from the energy spectrum. This numerical method has been successfully validated on thermally grown SiO sub 2 layers on Si and applied to SIMOX structures. (ERA citation 11:056603)