The resonance nuclear elastic scattering 16O(α,α) 16O at 3.045 MeV has been used to profile oxygen distributions in SOI material synthesised by SIMOX technique. The buried SiO2 layer is produced by 1.8×1018 at./cm2 oxygen implantation at 500℃ and high temperature annealing at 1405℃ for 30 min. The experimental results show that after annealing sharp SiO2/Si interfaces at both sides of buried layer and a very good quality of top Si single crystal layer are obtained. The formation mechanism of the buried layer, correlated with SiO2 precipitates and dissolution, radiation enhanced diffusion and epitaxial growth, is discussed.
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