Hole Transport and Charge Transfer in GaAs/InGaAs/GaAs Single Strained Quantum Well Structures

摘要

Reported are studies of MBE-grown single strained quantum- well structures with In/sub 0.2/Ga/sub 0.8/As wells and GaAs barriers. Structures with selective p-type doping were investigated using Hall-effect, magnetoresistance and magnetoluminescence measurements. Measured carrier densities were fit to a simple charge-transfer model. Directly measured effective masses confirm the prediction of a strain-induced, density-dependent light hole mass for planar conduction. Mobilities comparable to electron mobilities were attained. (ERA citation 11:054251)