Stability and Metastability in Semiconductor Strained-Layer Structures

摘要

The physics governing stability properties and relaxation of mismatch strain in semiconductor strained-layer structures is reviewed. Experimental data on stablity and rates of strain relaxation are examined. We conclude that essentially all observations on structural relaxation of semiconductor strained-layer structures can be explained by standard models of plastic deformation adapted to the special conditions controlling dislocation dynamics in these structures. 25 refs., 4 figs. (ERA citation 13:011925)