Interactions of Implanted Carbon with Oxygen and Nitrogen in Silicon

摘要

Carbon has been implanted into Si to overlap implanted concentrations of oxygen and nitrogen. Impurity incorporation and interactions produced by implantation at 50 deg C, and upon subsequent annealing to 900 deg C, were monitored by infrared absorption. Implantation with O and C introduces absorption bands for C-O centers in addition to those for substitutional C, interstitial O, and O-vacancy centers. These centers are removed by annealing. The major effect of C in N-implanted layers is a suppression of absorption bands associated previously with N aggregates. There is, apparently, a strong interaction between C and displacement defects which can alter defect reordering and control the loss of C from substitutional sites. 10 refs., 5 figs. (ERA citation 13:011926)