Oxygen-Nitrogen Interactions in Ion-Implanted Silicon

摘要

Interaction of oxygen and nitrogen in ion-implanted crystalline silicon layers has been investigated by infrared absorption. Infrared absorption bands which are not produced by either sup 14 N or sup 16 O alone are observed after sequential implantation of sup 14 N and sup 16 O into overlapping profiles followed by annealing at 500 degrees C. The new bands indicate oxygen-nitrogen interactions and are ascribed to Si-N vibrational modes with oxygen in nearby interstitial sites. (ERA citation 10:024119)