Applicability of Equilibrium Calculations to Dichlorosilane CVD (Chemical Vapor Deposition)

摘要

Equilibrium calculations were made for the chlorosilane (Si-H-Cl) system over a wide range of temperatures, pressures, and Si/Cl ratios. The Si/Cl ratios are presented as a function of the Cl/H ratio, temperature and pressure. Three-dimensional contour plots of the equilibrium Si/Cl also give a qualitative picture. Comparison of observed and equilibrium deposition rates indicate the range of applicability for the chlorosilane system. Results of this study indicate that equilibrium calculations can serve as a useful guide for silicon deposition from dichlorosilane at temperatures >1000 deg C and pressures between 625 and 80 Torr. An application related to the silicon-on insulator (SOI) technology is presented. 16 refs., 4 figs. (ERA citation 12:045816)