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Characterization and development report for the 375492: A Schottky barrier diode die.

机译：375492：肖特基势垒二极管裸片的特性和开发报告。

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This report documents the development and testing of the 375492, a Schottky barrier diode die, similar to the Hewlett-Packard 5082-0094. 18 figs., 4 tabs.

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作者
Holck, D. K.;
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年度 1990
页码 1-46
总页数 46
原文格式 PDF
正文语种 eng
中图分类工业技术;
关键词
Dies; Schottky Barrier Diodes; Documentation; Doped Materials; Electrical Properties; Electrodes; Fabrication; Impact Shock; Manufacturing; Mechanical Vibrations; Performance Testing; Quality Assurance; Radiation Hardening; Reliability; Semiconductor Materials; Sensitivity; Service Life; Specifications; Technology Assessment; Temperature Effects; EDB/360605; EDB/420500; EDB/426000;

机译：模具;肖特基势垒二极管;文档;掺杂材料;电气特性;电极;制造;冲击冲击;制造;机械振动;性能测试;质量保证;辐射硬化;可靠性;半导体材料;灵敏度;使用寿命;规格;技术评估;温度效应; EDB / 360605; EDB / 420500; EDB / 426000;

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专利

1. Electrical Characterizations of ZnO-Based MOS-Type Schottky Barrier Diodes [J] . Canadian Journal of Physics . 2018,第5期

机译：基于ZnO的MOS型肖特基势垒二极管的电气特性
2. Fabrication and characterization of Au- type InP Schottky barrier diode with monolayer graphene interlayer [J] . Catir Fulya Esra Cimilli Semiconductor science and technology . 2020,第3期

机译：单层石墨烯夹层Au / n型InP肖特基势垒二极管的制备与表征
3. Electrical characterization of GaN Schottky barrier diode at cryogenic temperatures [J] . Jiaxiang Chen, Min Zhu, Xing Lu, Applied Physics Letters . 2020,第6期

机译：低温下GaN肖特基势垒二极管的电学特性
4. Characterization of Barrier Height Due to Metal for Schottky Barrier Diode [C] . Mazhar B. Tayel, Ayman M. El-Shawarby International Conference on Computer Engineering Systems . 2008

机译：肖特基势垒二极管金属屏障高度的表征
5. Electrical characterization of Schottky barrier diodes on heteroepitaxial 3C-silicon carbide grown on silicon substrates. [D] . Kim, Byeung Chul. 2008

机译：在硅衬底上生长的异质外延3C碳化硅上的肖特基势垒二极管的电学特性。
6. Monolayer graphene/SiC Schottky barrier diodes with improved barrier height uniformity as a sensing platform for the detection of heavy metals [O] . Ivan Shtepliuk, Jens Eriksson, Volodymyr Khranovskyy, 2016

机译：具有改善的势垒高度均匀性的单层石墨烯/ SiC肖特基势垒二极管作为检测重金属的传感平台
7. Electrical Characterizations of Planar Ga2O3 Schottky Barrier Diodes [O] . Shiyu Zhang, Zeng Liu, Yuanyuan Liu, 2021

机译：平面Ga2O3肖特基势垒二极管的电气特色
8. Low Capacitance E-Beam Fabricated Beam Lead Schottky Barrier Diodes. Final Technical Report March 1981 - January 1985 [R] . Wrixon, G. T. 1985

机译：低电容电子束制造的束引线肖特基势垒二极管。 1981年3月至1985年1月的最终技术报告

Characterization and development report for the 375492: A Schottky barrier diode die.

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