Simulation and quantification of high-resolution Z-contrast imaging of semiconductor interfaces.

摘要

Incoherent characteristics of Z-contrast STEM images are explained using a Bloch wave approach. To a good approximation, the image is given by the columnar high-angle cross-section multiplied by the s-state intensity at the projected atom sites, convoluted with an appropriate resolution function. Consequently, image interpretation can be performed intuitively and quantitative simulation can be implemented on a small computer. The feasibility of 'column-by- column' compositional mapping is discussed. 15 refs., 6 figs.