Control of Critical Dimensions in Optical Imaging Processes for Semiconductor Production by Extracting Imaging Imperfections on the Basis of Imaging Tool Specific Intensity Measurements and Simulations

摘要

Variations in critical dimensions of circuit features of sophisticated semiconductor devices may be reduced by efficiently extracting mask and/or imaging tool specific non-uniformities with high spatial resolution by using measured intensity values and simulated intensity values. For example, a tool internal radiation sensor may be used for measuring the intensity of an image of a lithography mask, while a simulated intensity enables eliminating the mask pattern specific intensity contributions. In this manner, high spatial resolution of the corresponding correction map may be obtained without undue effort in terms of man power and measurement tool resources.