Si atom density profiles in a rotating disk CVD reactor

摘要

A rotating disk CVD reactor provides well characterized gas-flow and temperature fields that are easily modelled, which makes it well suited to fundamental research in CVD mechanisms. Laser-induced fluorescence measurements of Si atoms produced by silane decomposition in a rotating disk reactor are presented and compared with the predictions of a numerical model. The spatial distribution of the Si atoms appears to be quite sensitive to a few of the rate constants used in the model. The comparisons suggest some specific improvements to the model.