3D CFD for chemical transport profiles in a rotating disk CVD reactor

摘要

The RDCVD (Rotating Disk Chemical Vapor Deposition) technique is an appropriate method for uniform deposition of grains, such as compound semiconductior materials. The substrate temperature and rotation speed are the major factors, which determine the thickness uniformity of the deposited films. This paper investigates 3D CFD (3 Dimensional Computational Fluid Dynamics) simulation results of flow and heat transfer in a reactor of RDCVD using Fluent. In order to establish the reducibility of buoyancy effect on deposition quality, the chemical transport profile upon the disk heated is examined successfully in 3D domain for different rotating speeds. The resulting vortex flows due the simultaneous buoyance and centrifuge are discussed qualitatively in the 3D virtual system of a RDCVD reactor. 3D CFD is even more effective to describe the internal vortex flows due to the competitive inlet, buoyancy and centrifuge flows, which cannot be realized in the general 2D (2 Dimensional) CFD.