Simple method to estimate MOS oxide-trap, interface-trap, and border-trap densities.

摘要

Recent work has shown that near-interfacial oxide traps that communicates with the underlaying Si (''border traps'') can play a significant role in determining MOS radiation response and long-term reliability. Thermally-stimulated-current 1/f noise, and frequency-dependent charge-pumping measurements have been used to estimate border-trap densities in MOS structures. These methods all require high-precision, low-noise measurements that are often difficult to perform and interpret. In this summary, we describe a new dual-transistor method to separate bulk-oxide-trap, interface-trap, and border-trap densities in irradiated MOS transistors that requires only standard threshold-voltage and high-frequency charge-pumping measurements.