Materials Research Society Symposium Proceedings, Volume 422 Rare Earth DopedSemiconductors II, Symposium Held April 8-10 1996, San Franscisco, California, USA

摘要

The second MRS symposium on Rare Earth Doped Semiconductors', held three yearsafter the first one, was a truly international meeting with 51 contributions from 14 different countries. Research on rare earth doped semiconductors is mostly motivated by the fact that internal transitions in the rare-earth ions can be used to obtain well defined and temperature independent optical emission from these semiconductors. Recent advances in this research area motivated us to organize this symposium, with the aim to discuss the state of the art in this field, highlight new developments, identify the potential for optoelectronic applications, and to provide a forum for making new contacts. Indeed, over 200 papers on rare earth doped semiconductors have been published in the international literature over the past three years, indicating how lively this research area is. While the previous symposium on this topic in 1993 was mostly devoted to papers on rare earth doped II-VI and III-V semiconductors, clearly a shift was seen in the present symposium, as more than half of the presentations were devoted to rare earth doped silicon. This indicates that rare-earth doping of silicon is now seriously considered as a means to achieve silicon-based opto-electronic devices. In addition, several new reports on rare earth doped III-nitrides were presented.