AlGaN Channel Transistors for Power Management and Distribution

摘要

This report summarizes the first month on the SBIR Phase I program to developAlGaN Channel JFETs. A mask set to fabricate nitride based JFETs was begun. IV curves of GaN PN junctions are shown. Measurements of the leakage of these junctions indicate that recessing the P layer routinely will require an etch stop to minimize the leakage current. Ni Au P type ohmics did not withstand 500 C anneals.