Materials and Device Research for High-Speed Integrated OptoelectronicTransmitters Using Vertical-Cavity Surface-Emitting Lasers

摘要

This research was conducted in order to investigate and realize the monolithicintegration of an InGaAsP/InP surface emitting LED Double Heterojunction Light Emitting Diode (DH) with an entire process of the research: design, growth, fabrication, characterization, and result analysis. The highlighted features of the system are its monolithic integration, surface emitting optical device design (LED in this case), and lateral, rather than a vertical, coupling of the LED and the HBT. The InGaAsP quaternary active layer of the LED is designed to operate at lambda = 1.55 micrometers, which coincides with the lowest dispersion wavelength of silica optical fibers. Such an integrated structure is a prototype of an LED optical transmitter, which can be widely used in telecommunication and control applications. jg.