Semiconductor Quantum-Well Lasers and Ultrafast Optoelectronic Devices

摘要

We investigate both theoretically and experimentally high speed strainedsemiconductor lasers. We have developed a systematic experimental procedure to obtain the key high speed parameters of a semiconductor laser based on a measurement of the amplified spontaneous emission of a laser biased below threshold. We extract the gain, refractive index change, and linewidth enhancement factor spectra and compare with a complete theoretical model for the optical properties of strained semiconductors with excellent agreement. We also extend our measurement techniques to distributed feed back lasers and show that by a careful use of both theory and experiment we can obtain these device parameters along with the important distributed feedback cavity parameters.