InSb Infrared Photodetectors on Si Substrates Grown by Molecular Beam Epitaxy

摘要

The InSb infrared photodetectors grown heteroepitaxially on Si substrates bymolecular beam epitaxy (MBE) are reported. Excellent InSb material quality is obtained on 3-in Si substrates (with a GaAs predeposition) as confirmed by structural, optical, and electrical analysis. InSb infrared photodetectors on Si substrates that can operate from 77 K to room temperature have been demonstrated. The peak voltage-responsivity at 4 micrometers is about 1.0 x 10(exp 3) V/W and the corresponding Johnson-noise-limited detectivity is calculated to be 2.8 x 10(exp 10) cm.Hz(1/2)/W. This is the first important stage in developing InSb detector arrays or monolithic focal plane arrays (FPA's) on silicon. The development of this technology could provide a challenge to traditional hybrid FPA's in the future. p1.