Electronic Struture and Quantum Effects of Thin Metal Film Systems Based on Silicon Carbide.

摘要

This proposal is a study of the electronic structure and quantum effects of layer systems based on hexagonal silicon carbide, a large-gap electronic substrate material suitable for high-power and radiation-resistant applications. High temperature processing of SiC surfaces in vacuum leads to reconstructed surfaces with varying chemical compositions and atomic organizations. Prolonged heating depletes Si from the surface, resulting in the formation of a graphene sheet or a graphite-like structure made of multiple graphene sheets. These systems possess useful and/or unusual electronic structures including Dirac fermion dispersions near the Fermi level for a graphene sheet, band splittings in multiple sheets, and band bending within the SiC. The potential for novel electronic applications has driven large prevailing research efforts within the materials science community. Our research has focused on these low-dimensional systems, the formation of ultrathin metallic overlayers, and the resulting quantum physical properties of the composite systems.