Plasmonic Structures for CMOS Photonics and Control of Spontaneous Emission.

摘要

In this project, we have (i) demonstrated modulation of the refractive index n >1 at near infrared frequencies during field effect gating of conducting oxide (ITO) thin films for switching applications; (ii) demonstrated record low coupling loss from silicon-on-insulator waveguides to dielectrically-loaded surface plasmon polariton waveguides with 1 dB/transition insertion loss and also metal-insulator-metal waveguides; (iii) developed a full format CMOS image sensor with plasmonic color filters; (iv) explored enhanced spontaneous emission in nanoscale plasmonic cavities and have experimentally observed enhanced spontaneous emission in polymer plasmonic structures; (v) developed CMOS Si photonic switching device based on the vanadium dioxide (VO2) phase transition. (vi) also engaged in a partnership with the CEA-LETI laboratory and developed a next generation plasMOStor plasmonic metal-insulator- metal device in CMOS Si photonics with copper metallization and SOI waveguide- coupled inputs and outputs.