Ligand Exchange Reactions in Organometallic Vapor-Phase Epitaxy

摘要

The organometallic vapor phase epitaxy (OMVPE) of CdZnTe and InGaAs alloys hasbeen studied using on-line infrared spectroscopy and ex-situ X-ray crystallography. During II-VI OMVPE, ligand exchange reactions between dimethylcadmium and diethylzinc produce more reactive ethylcadmium species, and less reactive methylzinc species. During III-V OMVPE, reactions between trimethylindium and triethylgallium produce more reactive ethylindium compounds and less reactive methylgallium compounds. The large difference in reactivities of these sources makes it difficult to control the group II and III composition during CdZnTe and InGaAs OMVPE.