Mechanisms of Semiconductor Dry Etching by Translationally Hot Atoms andMolecules

摘要

A three year program of study was performed to investigate the effect of kineticenergy on etching. Both electron cyclotron resonance plasmas and inductively coupled radio frequency plasmas were investigated to determine the kinetic energies and source gas cracking of species in the plasmas. Studies were performed to measure the kinetic energy dependence of chlorine sticking to Si(100). Thermal etching studies of Si(100) by chlorine were completed using a novel single photon ionization method to detect SiCl and SiCl2 radical species directly.