Method for forming a photoresist with high resistance to dry etching and method for forming a semiconductor device using the same

摘要

The present invention during the etching process for forming a storage node of the cylinder structure, picture that is used as an etch mask even if the resist pattern is exposed to a plasma etching apparatus for a long time, is to prevent the deformation of the photoresist. Method for manufacturing a cylinder capacitor structure according to the present invention, the transistor is a step of forming an insulating film on the etch stop layer to form an etch barrier layer formed on the semiconductor substrate and the film on the photoresist pattern for a step of forming the insulating Remove the process and the pattern of the insulating film and the etch stop layer as an etch mask for sequentially forming step and the conductive film for the capacitor storage node is formed on the entire surface of the substrate etching step and the capacitor storage node to the UV treatment on the photoresist pattern and comprises a step of forming a capacitor storage node by removing the insulating film by wet etching