Imaging of Spatially Separated Electron-Hole Plasma Dynamics in Nipi-DopedPhotonic Materials

摘要

The aim of this research is to examine the structural and optical properties ofstrained InGaAs/GaAs quantum wells, quantum wires (QWRs) and dots (QDs) using new spatially, spectrally, and temporally resolved electron probes. The presence of defects will degrade the nonlinear optical properties and impact the performance of spatial light modulators and lasers. The carrier recombination dynamics and nonlinear optical properties in nipi-doped InGaAs/GaAs quantum wells were studied using a new approach called electron beam induced absorption (EBIA) modulation. Time-resolved cathodoluminescence (CL) was used to study InGaP and GaAs based QDs and QWRs. Carrier thermalization, ambipolar diffusion, and phase-space filling were studied with CL and EBIA, in an attempt to understand the interrelationship between the optical, transport, and structural properties in strained quantum heterostructures and nanostructures. These findings are expected to influence the design and implementation of these materials in light modulators and lasers, which can be used for digital optical communication, pattern recognition, and target tracking applications.