Charge Structures Interaction in Low Temperature STM Surface Investigations.

摘要

In this work we present the results of low-temperature STM investigation of A(subiii)B(subv) semiconductors surface in situ cleaved along (110) plane. On topographic STM images we have found surface charge structures. The possibility of their observation depends on the STM tip apex charge state. We have observed peaks in local tunneling conductivity spectra. Energy position of these peaks as well as the energy position of band gap edges changes with distance from the defect. Experimental data points to the existence of interacting induced charges localized both on STM tip apex and defects on the surface or in nearest subsurface layers.