Persistent Spectral Hole Burning Materials for Time-and- Frequency-Domain Optical Memories and Signal Processing

摘要

Optical materials for spectral hole burning and coherent transient applications were designed and evaluated, emphasizing relevance to devices including high performance memory, signal processing, high speed holographic recording and analysis, and optical switches, routers, and buffers. The ultimate limits on material performance set by atomic mechanisms were determined. The developed materials contained Eu3+, Pr3+, Tm3+, Tb3+, or Er3+ active ions in various oxide hosts. The first report was made of an Er3+ material for hole burning applications in 1.5 micron optical communications bands. Eight Er3+ materials for applications at 1.5 microns in optical routers and buffer memories were designed and characterized. A correlator' signal processing capability was demonstrated, and the first report was made of operation of a 1.5 micron packet header decoder for all-optimized optical packet switching in optical communications along optical fibers at 1531 nm. Eu3+:Y2SiO5 was optimized for use in 100 GByte ODRAM optical memory devices, considering Eu3+ concentration and temperature. Eight Tm3+ compounds for signal processing applications, such as true time delays for phased-array radar, at diode laser wavelengths near 795 nm were designed and characterized. Eight Tb3+ compounds for photon gated spectral hole burning were designed and characterized, and gated hole burning was observed in Tb3+:YAIO3.