Blue/UV Emitting GaN Laser

摘要

This report presents results from an epitaxial growth study of Gallium Nitride(GaN) for use as ultraviolet (UV) and blue laser diodes and light emitting diodes (LEDs). The method of growth investigated was Molecular Beam Epitaxy (MBE). The group V source was nitrogen gas that was cracked utilizing a 13.56 MHz Radio Frequency (RF) plasma source. From this RF plasma, sufficient atomic nitrogen was