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High Purity ZnS/Ge Interference Filter Emittance

机译:高纯Zns / Ge干涉滤波器发射率

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摘要

Data are presented that demonstrate infrared thin film interference filters made with CVD zinc sulfide start materials exhibit significantly higher spectral emittance than those made with IRTRAN II. A simple radiometric model and comparative analysis are discussed that indicates elevated filter emittance levels may adversely impact infrared sensors and seekers designed to operate in the 7 - 15 micron region. It is expected that systems that incorporate filters made with CVD ZnS could exhibit anomalous high backgrounds, image blurring or optical cross talk.

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