Single Crystal Growth and Characterization of Silicon Germanium Alloys

摘要

Silicon and germanium exhibit complete solid solubility for all binary concentrations. However, the growth of single crystalline SiGe alloys by bulk growth processes is hindered by the relatively wide separation of the solidus and liquidus lines. Previous research has yielded single crystals grown by the Czochralski method which are limited to only a few atomic percent of solute (Si or Ge), and even these crystals must be grown slowly (on the order of a millimeter per hour). On both a macroscopic and a microscopic scale, these crystals exhibit large axial variation in the solute distribution. This research investigates Si(x)Ge(1-x) alloys with 0