Dynamics of Optical Recombination in GaN and AlxGa(1-x)N

摘要

During the project period, we have investigated the optical properties of III-nitride heterostructures and quantum wells and provided input for the improvement of materials quality, understanding of impurity properties, and optimization of device design. We were the first group to observe the persistent photoconductivity (PPC) effect in p-type GaN epilayers and in AlGaN/ GaN heterostructures and utilized PPC effect to study the impurity properties in these materials. We were also one of the first few research groups to employ picosecond time-resolved photoluminescence (PL) measurement technique to study mechanisms of optical transitions, LED emission, and lasing in GaN and related materials.