Low Energy / Low Noise Electrical Component for Mobile Platform Applications

摘要

A thorough analysis was performed to evaluate the advantage of power Ldmos RF transistors built on SOI substrate versus bulk silicon substrate. It had been anticipated a significant improvement would be realized with SOI due to the lower inherent parasitic capacitances. The disadvantage of SOI would be its inability to dissipate heat as well as bulk silicon. Extensive data was taken to generate device models. RF simulations comparing simulated to actual verified these models. Our observation is that at the frequency of 1 GHz where the study was made, the advantage of lower parasitic capacitance is not apparent. There is an offset to this advantage due by the higher drain to gate feedback capacitance in the SOI process. The other disadvantage of SOI which is poorer heat dissipation played slightly to lower the performance. Overall the results showed that at the frequency and power levels studied, SOI did not provide an advantage over bulk silicon devices. Several publications have been derived from this work.