High-Efficiency, Class-E RF Power Amplifiers

摘要

In this project, we developed several low-cost, high-efficiency RF power amplifiers. The final amplifier produced an output power of 1.1 kW, and was built with a pair of $4 MOSFETs in the style used for switching power supplies. The drain efficiency was 85% and the frequency was 7 MHz. This amplifier used a new switching amplifier class that we developed that combines the zero-voltage switching of Class E and the waveform control of Class F. We call the new class E/F. This new class has also been applied to make a CMOS IC power amplifier that has an output of 2W at 2.4 GHz with an efficiency of 41%.