Defect Engineering of Low-Temperature Grown GaAs for Terahertz Radiation Applications

摘要

This report results from a contract tasking Semiconductor Physics Institute as follows: The contractor will investigate Gallium Arsenate (GaAs) based terahertz emitters. A variety of GaAs devices will be grown and characterized by standard electrical and optical techniques. The terahertz emission efficiency and its spectral width of the samples will also be measured. The goal of this investigation is to find the optimal conditions for the growth of GaAs layers from which efficient terahertz emitters for a frequency range of 0-10 THz can be manufactured.