Laterally Overgrown Structures as Substrates for Lattice Mismatched Epitaxy.

摘要

This article provides a general review of epitaxial lateral overgrowth (ELO) technology and of the application of ELO layers as substrates with an adjustable value of lattice constant. In particular, the issues of ELO growth mechanism, substrate defect filtration during ELO procedure, and strain in ELO layers will be addressed. Recent data on Metalorganic Vapor Phase Epitaxy (MOVPE) ELO growth of Gallium Nitride (GaN) on sapphire and the author's results on the lateral overgrowth of Gallium Arsenide (GaAs) on GaAs and Silicon (Si) substrates by Liquid Phase Epitaxy (LPE) are used as examples. Finally, other lateral overgrowth techniques (e.g., growth of lattice mismatched bridge layers and pendeo-epitaxial growth) will be presented and compared with the conventional ELO technique. (12 figures, 49 refs.).