Numerical Modeling of Heat-Mass Transfer in Radial Flow Plasma-Chemical Reactor with Multicomponent Kinetics CF4/02

摘要

The binary gas mixture CF4/O2 is widely used in industrial production of semiconductor devices to increase the etching rate of silicon wafers. The number of papers devoted to mathematical modeling of silicon etching in CF4/O2 plasma is relatively small. Moreover, the numerical modeling of silicon etching with simplifying kinetics of the gas phase and heterogeneous chemical reactions predicts a maximum of the etching rate near the 50% fraction of O2 in the parent gas mixture 1. This is inconsistent with experimental data where the maximum etching rate detected was at the 15-30% range of O2. In this paper, the results of numerical optimization of a radial flow plasma-chemical reactor depending on the binary gas composition CF4/O2 are presented. Quantitative estimations of oxygen chemisorption and adsorption of CF2 CF3 contributions to the etching rate are obtained.