Numerical modeling of contact-free control over crystal growth heat-mass transfer processes through heat field rotation

摘要

The paper presents results of numerical simulation of convective flows which exist in Ge and Si melts while growing crystals in Czochralski configuration in a rotating heat field of second order axial symmetry (L_2). The numerical simulation is based on the solution of non-stationary three-dimensional Navier-Stokes equations and heat-transfer equations in Boussinesq approximation.