Novel Asymmetric III-V/II-VI Hybrid Heterostructures for High-Power Mid- Infrared Laser

摘要

This report results from a contract tasking Ioffe Institute as follows: The main objectives of the proposal include technological, structural, theoretical and electro-optical studies of the novel asymmetric III-VIII-VI hybrid heterostructures and fabrication of these structures as mid-infrared lasers. We are proposing a new physical approach consisting of combining III-V and II-VI compounds in the one hybrid asymmetric laser structure based on Al(Ga) SbAs/InAs/Cd(Mg)Se which will lead to large conduction and valence band offsets (in excess of 1 eV for both cases) providing strong carrier and good optical confinement. It will provide suppression of carrier losses from the active region of the laser and leads to better quantum efficiency and weaker temperature dependence of the threshold current of the new laser structure. Additionally, as an alternative approach, GalnAsSb/lnAsSbP asymmetric laser structures with high P content (more than 40%) will be grown by MOCVD and studied. Theoretical calculations of this new laser design will be performed. The main parameters of the novel hybrid III-VIII-VI mid-IR laser structure (temperature dependence of threshold current, spontaneous and coherent emission spectra, optical power in pulsed and cw mode) will be investigated. Such lasers should have applications to optical communication through the atmosphere, and materials processing.