Semiconductor Amplifiers and Laser Wave Length from Microscopic Physics to Device Simulation

摘要

This contract involved a major effort in bringing to, maturity, a first-principles theory of semiconductor lasers and amplifiers based on a fully microscopic description of the light semiconductor material coupling. Earlier successes at the microscopic physics level enabled us to obtain quantitative agreement with gain/index and linewidth enhancement spectra measured for a variety of Quantum Well structures. The microscopic studies were extended to materials lasing at eye safe and telecoms wavelengths. In particular, in a joint collaboration between Arizona, Marburg and Infineon of Munich, we were able to quantitatively verify gain spectra of novel Nitrogen-doped GaAs and InGaAS materials.