Wide Bandgap High Power Optically Triggered Switch

摘要

Report developed under SBIR contract for topic no. AF02-187. Silicon Carbide (SiC) photoconductive Semiconductor Switches (PCSS) were fabricated as planar structures on high resistivity 4H-SiC and tested at DC Bias voltages up to 1000 V. The gap spacing between the electrodes was 1 mm with an inner electrode diameter of 1.5 mm. The typical maximum photocurrent of the device at 1000 V was about 49.4 A. The maximum current is limited due to the carrier recombination time which is smaller than the transit time.