Secondary Electron Emission (SEE) Measurements on Materials Under Stress. Preliminary Measurements of SEE Under High Temperature (Condition)

摘要

Secondary electron emission (SEE) coefficient of sapphire and Si and energy distributions of secondary electrons from aluminas were measured under high temperature at about 400 degrees C. These measurements intended to establish measurement systems of SEE coefficient and energy analysis of secondary electrons under high temperature conditions. Sample stages of scanning electron microscope (SEM) and X-ray photoelectron spectroscope (XPS) were modified to enable a sample to heat up to a temperature. SEE coefficients were measured by the modified SEM with pulsed electron beam. The modified XPS system was used to analyze energies of secondary electrons. Results can be summarized as follows; (1) The SEE coefficients of silicon and sapphire could be measured under room and high temperature. (2) In relative high temperature (200 degree C), an appreciable reduction in the SEE coefficient was confirmed for both silicon and sapphire. (3) Position dependence (not only temperature dependence) of the SEE coefficient was observed in sapphire. (4) The peak of energy distribution for secondary electrons was in about 8 eV, and the width spreaded over about 3.4 eV. The temperature rise caused decrease of energy about 0.7 eV, and did not affect the spread. (5) The peak height of the distribution decreased with temperature.